Mimix Broadband

’s four stage 36.0-43.0 GHz GaAs

MMIC buffer amplifier has a small signal gain of 24.0

dB with a noise figure of 4.0 dB across the band. Gain

increases with frequency to compensate for other

component roll-off factors common in 38.0-40.0 GHz

systems. This MMIC uses Mimix Broadband

’s 0.15 µm

GaAs PHEMT device model technology, and is based

upon electron beam lithography to ensure high

repeatability and uniformity. The chip has surface

passivation to protect and provide a rugged part with

backside via holes and gold metallization to allow

either a conductive epoxy or eutectic solder die

attach process. This device is well suited for

Millimeter-wave Point-to-Point Radio, LMDS, SATCOM

and VSAT applications.

36.0-43.0 GHz GaAs MMIC

Buffer Amplifier

Frequency Range (f )

Input Return Loss (S11)

Output Return Loss (S22)

Small Signal Gain (S21)

Gain Flatness (

∆S21)

Reverse Isolation (S12)

Noise Figure (NF)

Output Power for 1 dB Compression (P1dB)

Output Third Order Intercept Point (OIP3)

Drain Bias Voltage (Vd1,2)

Gate Bias Voltage (Vg1,2)

Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical)

Page 1 of 6

Features

High Dynamic Range/Postivie Gain Slope

Excellent LO Driver/Buffer Amplifier

Low Noise or Power Bias Configurations

24.0 dB Small Signal Gain

4.0 dB Noise Figure at Low Noise Bias

+14 dBm P1dB Compression Point at Low Noise Bias

100% On-Wafer RF, DC and Noise Figure Testing

100% Visual Inspection to MIL-STD-883

Method 2010

General Description

Parameter

Units

GHz

dB

dB

dB

dB

dB

dB

dBm

dBm

VDC

VDC

mA

Min.

36.0

-

-

-

-

-

-

-

-

-

-1.0

-

Typ.

-

8.0

8.0

24.0

+/-2.5

45.0

4.0

+14.0

+24.0

+3.0

-0.5

110

Max.

43.0

-

-

-

-

-

-

-

-

+5.5

0.0

220

Absolute Maximum Ratings

Supply Voltage (Vd)

Supply Current (Id)

Gate Bias Voltage (Vg)

Input Power (Pin)

Storage Temperature (Tstg)

Operating Temperature (Ta)

Channel Temperature (Tch)

+6.0 VDC

250 mA

+0.3 VDC

-8.0, -3.0 dBm

-55 to MTTF Table

MTTF Table

Chip Device Layout

(1) Optional power bias Vd1,2=5.5V, Id=220mA will typically yield 3-4 dB improved P1dB and OIP3.

(2) Measured using constant current.

(3) Channel temperature affects a device's MTBF. It is

recommended to keep channel temperature as low as

possible for maximum life.

3

1,2

1,2

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2005 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

3

April 2005 - Rev 01-Apr-05

B1002