MMDL101 datasheet(2/3 Pages) ETL

2 / 3 page

S1–2/3

MMDL101T1

TYPICAL CHARACTERISTICS

T A, AMBIENT TEMPERATURE (°C)

Figure 1. Reverse Leakage

V F , FORWARD VOLTAGE (VOLTS)

Figure 2. Forward Voltage

V R , REVERSE VOLTAGE (VOLTS)

Figure 3. Capacitance

P LO , LOCAL OSCILLATOR POWER (mW)

Figure 4. Noise Figure

Figure 5. Noise Figure Test Circuit

NOTES ON TESTING AND SPECIFICATIONS

Note1—C C andC T are measured using a capacitance

bridge(Boonton Electronics Model 75A or

equivalent).

Note2—Noise figure measured with diode under test in

tuned diode mount using UHF noise source and

local oscillator (LO) frequency of 1.0 GHz.The

LO power is adjusted for 1.0 mW. I F amplifier

NF = 1.5 dB, f = 30MHz, see Figure 5.

1.0

0.7

0.5

0.2

0.1

0.07

0.05

0.02

0.01

100

110

120

130

100

1.0

0.1

0.3

0.4

0.5

0.6

0.7

0.8

1.0

0.9

0.8

0.7

0.6

1.0

2.0

3.0

4.0

0.1

0.2

0.5

1.0

2.0

5.0

LOCAL

OSCILLATOR

V R = 3.0 Vdc

T A = –40°C

LOCAL OSCILLATOR FREQUENCY = 1.0GHz

(Test Circuit Figure 5)

T A = 85°C

T A = 25°C

MMBD110T1

UHF

NOISE SOURCE

H.P. 349A

NOISE

FIGURE METER

H.P. 342A

DIODE IN

TUNED

MOUNT

IF AMPLIFIER

NF = 1.5 dB

f = 30 MHz

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