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APM4548 Datasheet(PDF) 3 Page - Anpec Electronics Coropration

Part # APM4548
Description  Dual Enhancement Mode MOSFET (N-and P-Channel)
PDF  13 Pages
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Manufacturer  ANPEC [Anpec Electronics Coropration]
Direct Link  http://www.anpec.com.tw
Logo ANPEC - Anpec Electronics Coropration

APM4548 Datasheet(HTML) 3 Page - Anpec Electronics Coropration

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Copyright
© ANPEC Electronics Corp.
Rev. B.1 - Sep., 2005
www.anpec.com.tw
3
APM4548K
Electrical Characteristics (Cont.) (T
A = 25°C unless otherwise noted)
APM4548K
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Diode Characteristics
ISD=2A, VGS=0V
N-Ch
0.8
1.3
VSD
a
Diode Forward Voltage
ISD=-2.3A, VGS=0V
P-Ch
-0.8
-1.3
V
Dynamic Characteristics
b
N-Ch
2.5
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
P-Ch
11
Ω
N-Ch
960
Ciss
Input Capacitance
P-Ch
980
N-Ch
180
Coss
Output Capacitance
P-Ch
155
N-Ch
100
Crss
Reverse Transfer
Capacitance
N-Channel
VGS=0V,
VDS=15V,
Frequency=1.0MHz
P-Channel
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
P-Ch
120
pF
N-Ch
7
14
td(ON)
Turn-on Delay Time
P-Ch
7
14
N-Ch
9
17
Tr
Turn-on Rise Time
P-Ch
10
20
N-Ch
34
62
td(OFF)
Turn-off Delay Time
P-Ch
38
70
N-Ch
12
23
Tf
Turn-off Fall Time
N-Channel
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
P-Channel
VDD=-15V, RL=15Ω,
IDS=-1A, VGEN=-10V,
RG=6Ω
P-Ch
14
26
ns
N-Ch
5
Qrr
Reverse Recovery Charge
N-Channel
ISD=7A, dISD/dt =100A/µs
P-Channel
ISD=-6A, dISD/dt =100A/µs
P-Ch
3
nC
Gate Charge Characteristics
b
N-Ch
19
25
Qg
Total Gate Charge
P-Ch
24
30
N-Ch
2
Qgs
Gate-Source Charge
P-Ch
2
N-Ch
3.6
Qgd
Gate-Drain Charge
N-Channel
VDS=15V, VGS=10V,
IDS=7A
P-Channel
VDS=-15V, VGS=-10V,
IDS=-6A
P-Ch
3.7
nC
Notes:
a : Pulse test ; pulse width
≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.



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