TTC013

1

Bipolar Transistors Silicon NPN Triple-Diffused Type

TTC013

TTC013

TTC013

TTC013

Start of commercial production

2010-09

1.

1.

1.

1. Applications

Applications

Applications

Applications

•

High-Voltage Switching

•

LCD Backlighting

2.

2.

2.

2. Features

Features

Features

Features

(1)

High collector breakdown voltage: VCEO = 350 V

(2)

High DC current gain: hFE = 100 to 200 (IC = 50 mA)

3.

3.

3.

3. Packaging and Internal Circuit

Packaging and Internal Circuit

Packaging and Internal Circuit

Packaging and Internal Circuit

PW-Mini

1. Base

2. Collector (Heatsink)

3. Emitter

4.

4.

4.

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25

= 25

= 25

= 25





))))

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (pulsed)

Base current

Collector power dissipation

Collector power dissipation

Junction temperature

Storage temperature

DC

(t = 10 s)

.

(Note 1)

(Note 1)

(Note 2)

(Note 2)

Symbol

VCBO

VCEO

VEBO

IC

ICP

IB

PC

Tj

Tstg

Rating

600

350

7

0.5

1

0.25

1

2.5

150

-55 to 150

Unit

V

A

W



Note 1: Ensure that the junction temperature does not exceed 150.

Note 2: Device mounted on a 25.4 mm x 25.4 mm x 1.6 mm FR-4 glass epoxy board (with a dissipating copper surface

of 645 mm2)

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2015-08-04

Rev.3.0

©2015 Toshiba Corporation