TTC016

1

Bipolar Transistors Silicon NPN Epitaxial Type

TTC016

TTC016

TTC016

TTC016

Start of commercial production

2014-12

1.

1.

1.

1. Applications

Applications

Applications

Applications

•

High-Speed Switching

•

DC-DC Converters

2.

2.

2.

2. Features

Features

Features

Features

(1)

High DC current gain

: hFE = 400 to 1000 (IC = 0.5 A)

(2)

Low collector saturation voltage : VCE(sat) = 0.22 V (max) (IC = 1.6 A, IB = 32 mA)

(3)

High-speed switching

: tf = 95 ns (typ.)

3.

3.

3.

3. Packaging and Internal Circuit

Packaging and Internal Circuit

Packaging and Internal Circuit

Packaging and Internal Circuit

New PW-Mold

1. Base

2. Collector (Heatsink)

3. Emitter

4.

4.

4.

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25

= 25

= 25

= 25 





))))

Characteristics

Collector-base voltage

Collector-emitter voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (pulsed)

Base current

Collector power dissipation

Collector power dissipation

Junction temperature

Storage temperature

(Ta = 25 )

(Tc = 25 )

(Note 1)

(Note 1)

(Note 2)

Symbol

VCBO

VCEX

VCEO

VEBO

IC

ICP

IB

PC

PC

Tj

Tstg

Rating

120

100

50

9

5

10

0.5

1.2

24

175

-55 to 150

Unit

V

A

W



Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ensure that the junction temperature does not exceed 175 .

Note 2: The definitions of the absolute maximum junction and storage temperatures are based on AEC-Q101.

2015-03-05

Rev.1.0