1PS302 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 May 06

Philips Semiconductors

Product speciﬁcation

High-speed double diode

1PS302

ELECTRICAL CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Per diode

forward voltage

see Fig.3

IF =1mA

610

−

IF =10mA

740

−

IF =50mA

−

1.0

IF = 100 mA

−

1.2

reverse current

see Fig.4

VR =25V

−

VR =80V

−

0.5

µA

VR =25V; Tj = 150 °C

−

µA

VR =80V; Tj = 150 °C

−

100

µA

diode capacitance

f = 1 MHz; VR = 0; see Fig.5

−

1.5

trr

reverse recovery time

when switched from IF = 10 mA to

IR = 10 mA; RL = 100 Ω;

measured at IR = 1 mA; see Fig.6

−

4ns

Vfr

forward recovery voltage

when switched from IF = 10 mA;

tr = 20 ns; see Fig.7

−

1.75

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

200

K/W

Rth j-a

thermal resistance from junction to ambient

note 1

415

K/W

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