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1PS302 Datasheet(PDF) 4 Page - NXP Semiconductors

Part # 1PS302
Description  High-speed double diode
PDF  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

1PS302 Datasheet(HTML) 4 Page - NXP Semiconductors

  1PS302 Datasheet HTML 1Page - NXP Semiconductors 1PS302 Datasheet HTML 2Page - NXP Semiconductors 1PS302 Datasheet HTML 3Page - NXP Semiconductors 1PS302 Datasheet HTML 4Page - NXP Semiconductors 1PS302 Datasheet HTML 5Page - NXP Semiconductors 1PS302 Datasheet HTML 6Page - NXP Semiconductors 1PS302 Datasheet HTML 7Page - NXP Semiconductors 1PS302 Datasheet HTML 8Page - NXP Semiconductors  
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1999 May 06
4
Philips Semiconductors
Product specification
High-speed double diode
1PS302
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0
100
200
300
200
0
100
MBG443
Tamb (
oC)
IF
(mA)
(1)
(2)
(1) Tj = 150 °C; typical values.
(2) Tj =25 °C; typical values.
(3) Tj =25 °C; maximum values.
Fig.3
Forward current as a function of forward
voltage.
handbook, halfpage
02
300
IF
(mA)
0
100
200
MBG382
1
VF (V)
(1)
(3)
(2)
Fig.4
Reverse current as a function of junction
temperature.
handbook, halfpage
102
10
200
0
MBG380
100
Tj (
oC)
IR
(
µA)
1
10 2
10
1
(1)
(2)
(3)
(1) VR = 80 V; maximum values.
(2) VR = 80 V; typical values.
(3) VR = 25 V; typical values.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj =25 °C.
handbook, halfpage
08
16
12
4
0.8
0.6
0
0.4
0.2
MBG446
VR (V)
Cd
(pF)



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