2N3019 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 Jun 19

Philips Semiconductors

Product speciﬁcation

NPN medium power transistor

2N3019

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.01.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =90V

−

IE = 0; VCB =90V; Tamb = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−

hFE

DC current gain

VCE = 10 V; note 1

IC = 0.1 mA

−

IC =10mA

−

IC = 150 mA

100

300

IC = 150 mA; Tcase = −55 °C40

−

IC = 500 mA

−

IC =1A

−

VCEsat

collector-emitter saturation voltage

IC = 150 mA; IB =15mA

−

200

IC = 500 mA; IB = 50 mA; note 1

−

500

VBEsat

base-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1

−

1.1

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

emitter capacitance

IC =ic = 0; VEB = 500 mV; f = 1 MHz

−

transition frequency

IC = 50 mA; VCE = 10 V; f = 20 MHz

100

−

MHz

noise ﬁgure

IC = 0.1 mA; VCE =5V; RS =1kΩ;

f = 1 kHz; B = 200 Hz

−

4dB

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