1995 Oct 27

2

Philips Semiconductors

Product specification

Silicon planar epitaxial

overlay transistor

2N3553

APPLICATIONS

• The 2N3553 is intended for use in VHF and UHF

transmitting applications.

DESCRIPTION

The device is a silicon NPN overlay transistor in a TO-39

metal package with the collector connected to the case.

PINNING - TO-39/3

PIN

DESCRIPTION

1

emitter

2

base

3

collector

Fig.1 Simplified outline.

handbook, halfpage

MBB199

1

2

3

QUICK REFERENCE DATA

RF performance

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

collector-emitter voltage

65

V

collector-emitter voltage

40

V

peak collector current

1.0

A

total power dissipation

7.0

W

junction temperature

200

°C

transition frequency

500

−

f

(MHz)

(V)

(W)

(dB)

η

(%)

175

28

2.5

>10

>50

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.