2N3553 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1995 Oct 27

Philips Semiconductors

Product speciﬁcation

Silicon planar epitaxial

overlay transistor

2N3553

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Pulsed through an inductor of 25 mH;

δ = 0.5; f = 50 Hz.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

open emitter; IC = 0.25 mA

−−

V(BR)CEO

collector-emitter breakdown voltage

open base; IC up to 200 mA;

note 1

−−

V(BR)CEX

collector-emitter breakdown voltage

IC up to 200 mA; VBE = −1.5 V;

RB =33 Ω; note 1

−−

V(BR)EBO

emitter-base breakdown voltage

open collector; IE = 0.25 mA

−−

VBE

base-emitter voltage

IC = 250 mA; VCE =5V

−−

1.5

VCEsat

collector-emitter saturation voltage

IC = 250 mA; IB =50mA

−−

1.0

ICEO

collector leakage current

open base; VCE =30V

−−

0.1

hFE

DC current gain

VCE =5V; IC = 125 mA

−

200

VCE =5V; IC = 250 mA

−

100

transition frequency

IC = 125 mA; VCE =28V

−

500

−

MHz

Rhoie)

real part of input impedance

IC = 125 mA; VCE =28V;

f = 200 MHz

−−

Ω

collector capacitance

VCB = 28 V; IE =ie =0;

f=1MHz

−−

Fig.4

DC current gain as a function of collector

current; typical values.

handbook, halfpage

100

200

300

400

hFE

MGC935

500

IC (mA)

Fig.5

Collector capacitance as a function of

collector-base voltage; typical values.

handbook, halfpage

020

(pF)

VCB (V)

MGC930

2N3553 Datasheet(PDF) 4 Page - NXP Semiconductors

2N3553 Datasheet(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL