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BGY136 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BGY136 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 10 page ![]() 1996 May 08 4 Philips Semiconductors Product specification VHF power amplifier modules BGY135; BGY136 CHARACTERISTICS ZS = ZL = 50 Ω; PD = 150 mW; VS1 = VS2 = 12.5 V; Th = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT f frequency BGY135 132 − 156 MHz BGY136 146 − 174 MHz IQ2 leakage current VS1 = 0; PD = 0 − − 1 mA PL load power 18 − − W η efficiency adjust PD for PL = 18 W 38 45 − % H2 second harmonic adjust PD for PL = 18 W − − −25 dBc H3 third harmonic adjust PD for PL = 18 W − − −25 dBc VSWRin input VSWR adjust PD for PL = 18 W − 1.5 3 stability VS1 = VS2 = 10.8 to 15.6 V; PL = 2 to 20 W; VSWR = 3 : 1 − − −60 dBc ruggedness PD ≤ 300 mW; VS1 = VS2 = 15.6 V duration 5 s; PL < 25 W; VSWR = 50 : 1 no degradation Fig.3 Load power as a function of drive power; BGY135; typical values. VS1 = VS2 = 12.5 V. handbook, halfpage 0 5 10 15 20 25 30 35 0 100 200 PD (mW) 300 MRC266 156 MHz f = 132 MHz 144 MHz PL (W) Fig.4 Load power as a function of drive power; BGY136; typical values. VS1 = VS2 = 12.5 V. handbook, halfpage 0 10 20 30 0 100 200 300 f = 146 MHz 161 MHz 174 MHz MRC261 PL (W) PD (mW) |
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