STSJ50NH3LL datasheet(3/13 Pages) STMICROELECTRONICS

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STSJ50NH3LL

Electrical ratings

3/13

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

VGS

(1)

Continuous mode

Gate-source voltage

±16

VGS

(2)

Guaranteed for test time < 15ms

Gate-source voltage

±18

(4)

Drain current (continuous) at TC = 25°C

(3)

This value is rated accordingly to Rthj-pcb

Drain current (continuous) at TC=25°C

(4)

This value is rated accordingly to Rthj-c

Drain current (continuous) at TC=100°C

31.3

(3)

Drain current (continuous) at TC=100°C

7.5

IDM

(5)

Pulse width limited by safe operating area

Drain current (pulsed)

PTOT

Total dissipation at TC = 25°C

(3)

Total dissipation at TC = 25°C

(4)

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 2.

Thermal resistance

Symbol

Parameter

Value

Unit

Rthj-c

Thermal resistance junction-case Max

2.5

°C/W

Rthj-pcb

(1)

When mounted on 1 inch² FR-4 board, 2oz Cu (t<10sec.)

Thermal resistance junction-pcb Max

°C/W

Table 3.

Avalanche data

Symbol

Parameter

Value

Unit

IAV

Not repetitive avalanche current (pulse

width limited by Tjmax)

EAS

Single pulse avalanche energy (starting

Tj=25°C, ID=IAV, VDD=24V)

800

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