STSJ50NH3LL datasheet(4/13 Pages) STMICROELECTRONICS

4 / 13 page

Electrical characteristics

STSJ50NH3LL

4/13

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating

VDS = Max rating TC=125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±16V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID =250µA

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 6A

VGS= 4.5V, ID= 6A

0.008

0.010

0.0105

0.013

Ω

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 6A @125°C

VGS= 4.5V, ID= 6A @125°C

0.012

0.016

Ω

Table 5.

Dynamic

Symbol

Parameter

Test Condictions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS =10V, ID = 12A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1MHz, VGS=0

965

285

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15V, ID =12A

VGS =4.5V,(see Figure 15)

3.7

Gate input resistance

f=1MHz Gate DC Bias=0

Test signal level =20mv open

drain

0.5

1.5

2.5

Ω

STSJ50NH3LL Datasheet(PDF) 4 Page - STMicroelectronics

STSJ50NH3LL Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL