HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HJ200101

Issued Date : 2001.09.01

Revised Date : 2005.07.14

Page No. : 1/4

HSB857J

HSMC Product Specification

HSB857J

PNP EPITAXIAL PLANAR TRANSISTOR

Description

Low frequency power amplifier.

• Maximum Temperatures

Storage Temperature ............................................................................................................................. -50~+150

°C

Junction Temperature ................................................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (T

• Maximum Voltages and Currents

BV

BV

BV

I

I

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BV

CBO

-60

-

-

V

I

BV

CEO

-50

-

-

V

I

BV

EBO

-5

-

-

V

I

I

CBO

--

-1

uA

V

I

CEO

--

-1

uA

V

I

EBO

--

-1

uA

V

*V

CE(sat)

--0.3

-1

V

I

*V

BE(sat)

--

-1.5

V

I

*h

FE

170

-

400

I

f

T

-15

-

MHz

V

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

TO-252