TLLG542.

www.vishay.com

Vishay Semiconductors

Rev. 1.0, 30-Nov-2022

1

Document Number: 86336

For technical questions, contact: LED@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Efficiency LED, Ø 5 mm Tinted Diffused Package

DESCRIPTION

The tinted diffused 5 mm green LED series was developed

for standard applications like general indicating and lighting

purposes. The low current version TLLG542. using AlInGaP

chip technology is categorized at 2 mA. The wide viewing

angle of these devices provides a high on-off contrast.

All LEDs are categorized in luminous intensity groups.

That allows users to assemble LEDs with uniform

appearance.

PRODUCT GROUP AND PACKAGE DATA

• Product group: LED

•Package: 5 mm

• Product series: low current

• Angle of half intensity: ± 25°

FEATURES

• Standard T-1¾ package

• Wide viewing angle

• Luminous intensity and wavelength categorized

• TLLG542. with stand-offs

• Material categorization:

for

definitions

of

compliance

please

see

www.vishay.com/doc?99912

APPLICATIONS

• Status lights

•Off / on indicator

• Background illumination

• Readout lights

• Maintenance lights

•Legend light

19223

PARTS TABLE

PART

COLOR

LUMINOUS

INTENSITY

(mcd)

at IF

(mA)

WAVELENGTH

(nm)

at IF

(mA)

FORWARD

VOLTAGE

(V)

at IF

(mA)

TECHNOLOGY

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

TLLG5420

Green

1

3.5

-

2

562

569

575

2

-

1.9

2.2

2

AlInGaP on GaAs

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

TLLG542.

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

VR

5V

DC forward current

IF

25

mA

Surge forward current

(Duty cycle 1/10 at 1 kHz)

IFSM

60

mA

Power dissipation

PV

60

mW

Junction temperature

Tj

100

°C

Operating temperature range

Tamb

-40 to +85

°C

Storage temperature range

Tstg

-40 to +100

°C

Soldering temperature

t

≤ 5 s, 2 mm from body

Tsd

260

°C

Thermal resistance junction to solder point

RthJS

325

K/W