AP2301A/AP2311A

Document number: DS37743 Rev. 2 - 2

4 of 17

www.diodes.com

February 2018

© Diodes Incorporated

AP2301A/AP2311A

Electrical Characteristics (@TA = +25°C, VIN = +5V, CIN = 0.1µF, CL = 1µF, unless otherwise specified.)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

VUVLO

Input UVLO

VIN rising

1.6

2.0

2.4

V

ΔVUVLO Input UVLO Hysteresis

VIN decreasing

—

50

—

mV

ISHDN

Input Shutdown Current

Disabled, OUT = open

—

0.1

1

µA

IQ

Input Quiescent Current

Enabled, OUT = open

—

60

100

µA

ILEAK

Input Leakage Current

Disabled, OUT grounded

—

0.1

1

µA

IREV

Reverse Leakage Current

Disabled, VIN = 0V, VOUT = 5V, IREV at VIN

—

0.01

1

µA

RDS(ON) Switch On-Resistance

VIN = 5V, IOUT= 2.0A

TA = +25°C

—

70

84

mΩ

-40°

C ≤ TA ≤ +85°C

—

—

105

VIN = 3.3V, IOUT = 2.0A

TA = +25°C

—

90

108

-40°

C ≤ TA ≤ +85°C

—

—

135

ILIMIT

Over-Load Current Limit (Note 6)

VIN = 5V, VOUT = 4.5V

-40°

C ≤ TA ≤ +85°C

2.05

2.50

2.85

A

ITRIG

Current Limiting Trigger Threshold Output Current Slew rate (<100A/s)

—

2.5

—

A

ISHORT

Short-Circuit Current Limit

Enabled into short circuit

—

2.75

—

A

tSHORT

Short-Circuit Response Time

VOUT = 0V to IOUT = ILIMIT (OUT shorted to ground)

—

2

—

µs

VIL

EN Input Logic Low Voltage

VIN = 2.7V to 5.5V

—

—

0.8

V

VIH

EN Input Logic High Voltage

VIN = 2.7V to 5.5V

2

—

—

V

ILEAK-EN EN Input Leakage

VIN = 5V, VEN = 0V and 5.5V

—

0.01

1

µA

ILEAK-O

Output Leakage Current

Disabled, VOUT = 0V

—

0.5

1

µA

tD(ON)

Output Turn-on Delay Time

CL= 1µF, RLOAD = 5Ω

—

0.1

—

ms

tR

Output Turn-on Rise Time

CL= 1µF, RLOAD = 5Ω

—

0.6

1.5

ms

tD(OFF)

Output Turn-off Delay Time

CL= 1µF, RLOAD = 5Ω

—

0.1

—

ms

tF

Output Turn-off Fall Time

CL= 1µF, RLOAD = 5Ω

—

0.05

0.1

ms

RFLG

FLG Output FET on-Resistance

IFLG = 10mA

—

25

40

Ω

IFOH

FLG Off Current

VFLG= 5V

—

0.01

1

µA

tBLANK

FLG Blanking Time

Assertion or deassertion due to overcurrent and over-

temperature condition

4

7

15

ms

tDIS

Discharge Time

CL= 1µF, VIN = 5V, disabled to VOUT < 0.5V

—

0.6

—

ms

RDIS

Discharge Resistance (Note 7)

VIN = 5V, disabled, IOUT= 1mA

—

105

—

Ω

TSHDN

Thermal Shutdown Threshold

Enabled

—

+140

—

°C

THYS

Thermal Shutdown Hysteresis

—

—

+20

—

°C

θJA

Thermal Resistance Junction-to-

Ambient

SO-8 (Note 8)

—

96

—

°C/W

MSOP-8 (Note 8)

—

130

—

°C/W

MSOP-8-EP (Note 9)

—

92

—

°C/W

U-DFN3030-8 (Type E) (Note 9)

—

84

—

°C/W

U-DFN2020-6 (Note 10)

—

90

—

°C/W

Notes:

6. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.

7. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up power-down when VIN < VUVLO).

The discharge function offers a resistive discharge path for the external storage capacitor for limited time.

8. Device mounted on 2

” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.

9. Device mounted on 2

” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground

plane.

10. Device mounted on 1"x1" FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground.