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LM3489 Datasheet(PDF) 11 Page - National Semiconductor (TI) |
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LM3489 Datasheet(HTML) 11 Page - National Semiconductor (TI) |
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11 / 15 page ![]() Functional Description (Continued) At high input voltages (>28V) increased undershoot at the switch node can cause an increase in the current limit threshold. To avoid this problem, a low Vf Schottky catch diode must be used (See Catch Diode Selection). Addition- ally, a resistor can be placed between the ISENSE pin and the switch node. Any value in the range of 220 Ω to 600Ω is recommended. START UP The current limit circuit is active during start-up. During start-up the PFET will stay on until either the current limit or the feedback comparator is tripped If the current limit comparator is tripped first then the fold back characteristic should be taken into account. Start-up into full load may require a higher current limit set point or the load must be applied after start-up. One problem with selecting a higher current limit is inrush current during start-up. Increasing the capacitance (C ADJ)in parallel with R ADJ results in a soft-start characteristic. CADJ and R ADJ create an RC time constant forcing current limit to activate at a lower current. The output voltage will ramp more slowly when using this technique. There is example start-up plot for C ADJ equal to 1nF in the Typical Perfor- mance Characteristics. Lower values for C ADJ will have little to no effect on soft-start. EXTERNAL SENSE RESISTOR The V DS of a PFET will tend to vary significantly over tem- perature. This will result an equivalent variation in current limit. To improve current limit accuracy an external sense resistor can be connected from V IN to the source of the PFET, as shown in Figure 5. The current sense resistor, R CS should have value comparable with R DSON of the PFET used, typically in the range of 50m Ω to 200 mΩ. The equa- tion in the Current Limit Operation section can be used by replacing the R DSON with RCS. PGATE When switching, the PGATE pin swings from VIN (off) to some voltage below VIN (on). How far the PGATE will swing depends on several factors including the capacitance, on time, and input voltage. PGATE voltage swing will increase with decreasing gate capacitance. Although PGATE voltage will typically be around VIN-5V, with very small gate capacitances, this value can increase to a typical maximum of VIN-8.3V. Additionally, PGATE swing voltage will increase as on time increases. During long on times, such as when operating at 100% duty cycle, the PGATE voltage will eventually fall to its maximum voltage of VIN-8.3V (typical) regardless of the PFET gate capacitance. The PGATE voltage will not fall below 0.4V (typical). There- fore, when the input voltage falls below approximately 9V, the PGATE swing voltage range will be reduced. At an input voltage of 7V, for instance, PGATE will swing from 7V to a minimum of 0.4V. DEVICE ENABLE, SHUTDOWN The LM3489 can be remotely shutdown by forcing the en- able pin to ground. With EN pin grounded, the internal blocks other than the enable logic are de-activated and the shut- down current of the device will be lowered to only 7µA (typical). Releasing the EN pin allows for normal operation to resume. The EN pin is internally pulled high with the voltage clamped at 8V typical. For normal operation this pin should be left open. In case an external voltage source is applied to this pin for enable control, the applied voltage should not exceed the maximum operating voltage level specified in this datasheet, i.e. 5.5V. ADJUSTABLE UVLO The under-voltage-lockout function can be implemented as shown in Figure 6. By incorporating the feature of the inter- nal enable threshold, the lockout level can be programmed through an external potential divider formed with R3 and R4. The input voltage information is detected and compared with the enable threshold and the device operation will be inhib- ited when V IN drops below the preset UVLO level. The UVLO and hysteresis voltage can be calculated as follows: 20186926 FIGURE 4. Current Limit Fold Back Phenomenon 20186927 FIGURE 5. Current Sensing by External Resistor www.national.com 11 |
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