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STTH302S Datasheet(PDF) 1 Page - STMicroelectronics

Part # STTH302S
Description  HIGH EFFICIENCY ULTRAFAST DIODE
PDF  5 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH302S Datasheet(HTML) 1 Page - STMicroelectronics

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STTH302S
April 2002 - Ed: 1A
HIGH EFFICIENCY ULTRAFAST DIODE
®
The STTH302S, which is using ST’s new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
DESCRIPTION
s
Very low conduction losses
s
Negligible switching losses
s
Low forward and reverse recovery times
s
High junction temperature
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
200
V
IF(AV)
Average forward current
Tl = 107°C
δ =0.5
3
A
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
100
A
Tstg
Storage temperature range
- 65 + 175
°C
Tj
Maximum operating junction temperature
175
°C
ABSOLUTE RATINGS (limiting values)
IF(AV)
3A
VRRM
200 V
Tj (max)
175 °C
VF (max)
0.75 V
trr (max)
35 ns
MAIN PRODUCT CHARACTERISTICS
SMC
Symbol
Parameter
Maximum
Unit
Rth (j-l)
Junction to lead
20
°C/W
THERMAL PARAMETERS


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