STTH302S datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

STTH302S

3/5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

(A)

F(AV)

(W)

F(AV)

δ=tp/T

δ = 0.05 δ

= 0.1

δ = 0.2

δ = 0.5

δ = 1

Fig. 1: Average forward power dissipation versus

average forward current.

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

100

125

150

175

(°C)

amb

th(j-a)=Rth(j-l)

th(j-a)=75°C/W

S=1cm²

(A)

F(AV)

Fig. 2: Average forward current versus ambient

temperature (

δ = 0.5)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

tp(s)

δ=tp/T

Zth(j-a)/Rth(j-a)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Fig. 3: Relative variation of thermal impedance

junction ambient versus pulse duration (Printed

circuit board epoxy FR4).

100

1000

V (V)

F=1MHz

osc=30mV

j=25°C

C(pF)

Fig. 5: Junction capacitance versus reverse

voltage applied (typical values).

0.1

1.0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

(V)

j=25°C

(Maximum values)

j=125°C

(Maximum values)

j=125°C

(Maximum values)

j=125°C

(Typical values)

j=125°C

(Typical values)

(A)

Fig. 4:

Forward voltage drop versus forward

current.

100

1000

dI /dt(A/µs)

F=3A

R=100V

j=125°C

j=25°C

(ns)

Fig. 6: Reverse recovery time versus dIF/dt (90%

confidence).

STTH302S Datasheet(PDF) 3 Page - STMicroelectronics

STTH302S Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5

Datasheet Download

Link URL