TS8510VB

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Vishay Semiconductors

Rev. 1.0, 06-Feb-18

2

Document Number: 84402

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Note

(1) The measurements are based on samples of die which are mounted on a TO-18 gold header without resin coating

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Relative Spectral Emission



e rel = f ()

Fig. 2 - Radiant Characteristics

Irel = f()

DIMENSIONS

Fig. 3 - Sectional View





BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 50 mA, tp = 20 ms

VF

-1.55-

V

Radiant power (1)

IF = 50 mA



e

-18

-

mW

Reverse voltage

IR = 5 μA

VR

10

-

-

V

Angle of half intensity

IF = 50 mA



-60

-

deg

Peak wavelength

IF = 50 mA



p

840

855

870

nm

Spectral bandwidth

IF = 50 mA



0.5

-30

-

nm

Rise time / fall time

IF = 100 mA

tr, tf

-10

-

ns

0

10

20

30

40

50

60

70

80

90

100

700

750

800

850

900

950

λ - Wavelength (nm)

I

F = 50 mA

0.4

0.2

0

0.6

0.9

0.8

0°

30°

10°

20°

40°

50°

60°

70°

80°

0.7

1.0

90 μm

Bonding area

0.23

typ. 170 μm

n-electrode

p-electrode

p-n junction

(0.26)