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2

TT260N22

Thyristor Modules

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MAX

UNIT

VT

Forward Voltage Drop

ITM = 750A,TJ = 25 ℃

1.5

V

IDRM

IRRM

Peak Reverse and Off-state

Leakage Current

VR= VRRM,TJ = 125 ℃

20

mA

IGT

DC gate current required to trigger

Tvj = 25℃ ; d.c.

180

mA

VGT

DC gate voltage required to trigger

2.5

V

dv/dt

Critical rate of rise of off-state voltage

Tvj = 125℃;VDM=67%VDR

800

V/μs

di/dt

Critical rate of rise of on-state current

Tvj = 125℃Gate source tr≤0.5us

Repetitive

100

A/us

PACKAGE OUTLINE

Dimensions in mm (1mm = 0.0394“)

NOTICE：

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of

our products.

ISC products are intended for usage in general electronic equipment. The products are not

designed for use in equipment which require specialized quality and/or reliability, or in equipment

which could have applications in hazardous environments, aerospace industry, or medical

field. Please contact us if you intend our products to be used in these special applications.

ISC makes no warranty or guarantee regarding the suitability of its products for any particular

purpose, nor does ISC assume any liability arising from the application or use of any products, and

specifically disclaims any and all liability, including without limitation special, consequential or

incidental damages.