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TT260N22 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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TT260N22 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 TT260N22 Thyristor Modules FEATURES · Pressure contact technology with Increased power cycling capability · Space and weight saving TYPICAL APPLICATIONS · AC/DC Motor drives · Various rectifiers ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VRRM Repetitive Peak Reverse Voltage 2200 V VDRM Repetitive Peak Forward Blocking Voltage 2200 V IT(AV) Average on-state current 180°half sine wave 50Hz Single side cooled; Tc= 85℃; 260 A IRMS RMS forward current per phase 410 A I2t I2t For Fusing coordination 405*103 KA2S Viso isolation voltage 2500 V TJ Junction Temperature -40~125 ℃ Tstg Storage Temperature Range -40~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case ingle side cooled per chip 0.12 ℃ /W |
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