IL250, IL251, IL252, ILD252

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Vishay Semiconductors

Rev. 1.9, 21-Feb-18

2

Document Number: 83618

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements

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ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Forward continuous current

IF

60

mA

Power dissipation

Pdiss

100

mW

Derate linearly from 25 °C

1.33

mW/°C

OUTPUT

Collector emitter breakdown voltage

BVCEO

30

V

Emitter base breakdown voltage

BVEBO

5V

Collector base breakdown voltage

BVCBO

70

V

Power dissipation single channel

Pdiss

200

mW

Power dissipation dual channel

Pdiss

150

mW

Derate linearly from 25 °C single channel

2.6

mW/°C

Derate linearly from 25 °C dual channel

2

mW/°C

COUPLER

Total dissipation single channel

Ptot

250

mW

Total dissipation dual channel

Ptot

400

mW

Derate linearly from 25 °C single channel

3.3

mW/°C

Derate linearly from 25 °C dual channel

5.3

mW/°C

Storage temperature

Tstg

-55 to +150

°C

Operating temperature

Tamb

-55 to +100

°C

Lead soldering time at 260 °C

10

s

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = ± 10 mA

VF

-1.2

1.5

V

OUTPUT

Collector emitter breakdown voltage

IC = 1 mA

BVCEO

30

50

-

V

Emitter base breakdown voltage

IE = 100 μA

BVEBO

710

-

V

Collector base breakdown voltage

IC = 10 μA

BVCBO

70

90

-

V

Collector emitter leakage current

VCE = 10 V

ICEO

-

5

50

nA

COUPLER

Collector emitter saturation voltage

IF = ± 16 mA, IC = 2 mA

VCEsat

--

0.4

V