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Document Number: 83650

2

Rev. 1.8, 24-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

ILQ32

Vishay Semiconductors

Optocoupler, Photodarlington Output,

High Gain (Quad Channel)

Note

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

INPUT

Peak reverse voltage

VR

3V

Forward continuous current

IF

60

mA

Power dissipation

Pdiss

100

mW

Derate linearly from 25°C

1.33

mW/°C

OUTPUT

Collector emitter breakdown

voltage

BVCEO

30

V

Collector (load) current

IC

125

mA

Power dissipation

Pdiss

150

mW

Derate linearly from 25°C

2mW/°C

COUPLER

Isolation test voltage

between emitter and detector

t = 1 s

VISO

5300

VRMS

Creepage distance

 7mm

Clearance distance

 7mm

Comparative tracking index per

DIN IEC 112/VDE 0303, part 1

CTI

 175

Isolation resistance

VIO = 500 V, Tamb = 25 °C

RIO

1012



VIO = 500 V, Tamb = 100 °C

RIO

1011



Total dissipation

ILQ32

Ptot

500

mW

Derate linearly from 25 °C

ILQ32

6.67

mW/°C

Storage temperature

Tstg

- 55 to + 150

°C

Operating temperature

Tamb

- 55 to + 100

°C

Lead soldering time at 260 °C

10

s

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 10 mA

VF

1.25

1.5

V

Reverse current

VR = 3 V

IR

0.1

100

μA

Capacitance

VR = 0 V

CO

25

pF

OUTPUT

Collector emitter breakdown

voltage

IC = 100 A, IF = 0 A

BVCEO

30

V

Breakdown voltage emitter

collector

IE = 100 μA

BCECO

510

V

Collector emitter leakage current

VCE = 10 V, IF = 0 A

ICEO

1

100

nA

COUPLER

Collector emitter

IC = 2 mA, IF = 8 mA

VCEsat

1V

Capacitance (input to output)

CIO

0.5

pF