STGP10NB37LZ datasheet(4/15 Pages) STMICROELECTRONICS

4 / 15 page

Electrical characteristics

STGB10NB37LZ, STGP10NB37LZ

4/15

Doc ID 7402 Rev 4

Electrical characteristics

(TJ = 25 °C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

VCES(clamped)

Collector emitter clamped

voltage (VGE = 0)

IC = 2 mA,

TJ = -40 °C to 150 °C

380

410

440

V(BR)ECS

Emitter collector break-

down voltage (VGE = 0)

IEC = 75 mA

VGE(clamped)

Gate emitter clamped

voltage

IG = ± 2 mA

VCE(sat)

Collector-emitter saturation

voltage

VGE = 4.5 V, IC= 10 A

VGE = 4.5 V, IC= 20 A

1.2

1.3

1.8

VGE(th)

Gate threshold voltage

VCE = VGE, IC= 250 µA

TJ = -40 °C to 150 °C

0.6

2.2

ICES

Collector cut-off current

(VGE = 0)

VCE = 15 V, TJ= 150 °C

VCE = 200 V, TJ=150 °C

100

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE= ±10 V

±700

µA

RGE

Gate emitter resistance

Ω

gfs

Forward transconductance

VCE = 25 V, IC = 20 A

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

1300

105

Total gate charge

VCE = 328 V, IC = 10 A,

VGE = 5 V,

(see

Figure 18)

Table 6.

Functional characteristics

Symbol

Parameter

Test condition

Min. Typ. Max. Unit

U.I.S.

Unclamped inductive

switching current

RGOFF = 1 kΩ, L = 1 mH,

TJ = 125 °C

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