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V3023 Datasheet(PDF) 2 Page - EM Microelectronic - MARIN SA |
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V3023 Datasheet(HTML) 2 Page - EM Microelectronic - MARIN SA |
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2 / 15 page ![]() R V3023 Copyright © 2004, EM Microelectronic-Marin SA 2 www.emmicroelectronic.com Absolute Maximum Ratings Parameter Symbol Conditions Maximum voltage at VDD VDDmax VSS + 7.0V Max. voltage at remaining pins Vmax VDD + 0.3V Min. voltage on all pins Vmin VSS – 0.3V Maximum storage temperature TSTOmax +125°C Minimum storage temperature TSTOmin -55°C Maximum electrostatic discharge to MIL-STD-883C method 3015.7 with ref. to VSS VSmax 1000V Maximum soldering conditions TSmax 250°C x 10s Shock resistance 5000 g. 0.3ms, ½ sine Table 1 Stresses above these listed maximum ratings may cause permanent damages to the device. Exposure beyond specified operating conditions may affect device reliability or cause malfunction. Handling Procedures This device has built-in protection against high static voltages or electric fields; however, anti-static precautions must be taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the voltage range. Unused inputs must always be tied to a defined logic voltage level. Operating Conditions Parameter Symbol Min Typ Max Unit Operating temperature TA -40 +85 °C Logic supply voltage VDD 2.0 5.0 5.5 V Supply voltage dv/dt (power-up & down) dv/dt 6 V/µs Decoupling capacitor 100 nF Table 2 Electrical Characteristics VDD= 5.0V ±10%, VSS = 0V, TA=-40 to +85°C, unless otherwise specified Parameter Symbol Test Conditions Min Typ Max Unit Standby current (note 1) IDD VDD = 3 V, PF = 0 VDD = 5 V, PF = 0 1.2 2 10 15 µA µA Dynamic current (note 2) IDD CS = 4 MHz, RD = VSS WR = VDD 1.5 mA IRQ (open drain) Output low voltage VOL IOL = 8 mA 0.4 V Output low voltage VOL IOL = 1 mA, VDD = 2 V 0.4 V Inputs and Outputs Input logic low VIL TA = +25°C 0.2 VDD V Input logic high VIH TA = +25°C 0.8 VDD V Output logic low VOL IOL = 6 mA 0.4 V Output logic high VOH IOH = 6 mA 2.4 V PF activation voltage VPFL 0.5 VDD V PF hysteresis VH TA = +25°C 100 mV Pullup on SYNC ILS VILS = 0.8 V 20 µA Input leakage IIN VSS < VIN < VDD 10 1000 nA Output tri-state leakage ITS CS = 1 10 1000 nA Oscillator Characteristics Starting voltage VSTA TA ≥ +25°C 2 V VSTA 2.5 V Frequency Characteristics Start-up time TSTA 1 s Frequency tolerance ∆f/f TA = +25°C addr. 10 hex = 00 hex 150 210 (note 4) 251 ppm Frequency stability fsta 2.0 ≤ VDD ≤ 5.5 V (note 3) 1 5 ppm/V Temperature stability tsta addr. 10 hex = 00 hex see Fig.5 ppm Aging tag TA = +25°C, first year ±5 ppm/year Table 3 Note 1 : With PFO = 0 (VSS) all I/O pads can be tri-state, tested. With PFO = 1 (VDD), CS = 1 (VDD) and all other I/O pads fixed to VDD or VSS: same standby current, not tested. Note 2 : All other inputs to VDD and all outputs open. Note 3 : At a give temperature. Note 4 : See Fig. 4 |
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