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V6116 Datasheet(PDF) 2 Page - EM Microelectronic - MARIN SA

Part # V6116
Description  Digitally Programmable 2, 4 and 8 Mux LCD Driver
PDF  15 Pages
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Manufacturer  EMMICRO [EM Microelectronic - MARIN SA]
Direct Link  http://www.emmicroelectronic.com
Logo EMMICRO - EM Microelectronic - MARIN SA

V6116 Datasheet(HTML) 2 Page - EM Microelectronic - MARIN SA

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V6116
Copyright
© 2005, EM Microelectronic-Marin SA
2
www.emmicroelectronic.com
Absolute Maximum Ratings
Parameter
Symbol
Conditions
Supply voltage range
VDD
-0.3V to 9V
LCD supply voltage range
VLCD
-0.3V to 9.5V
Voltage at DI, DO, CLK, STR,
FR, COL
VLOGIC
-0.3V to
VDD+0.3V
Voltage at V1 to V3, S1 to S40
VDISP
-0.3V to VLCD +
0.3V
Storage temperature range
TSTO
-65 to +150°C
Electrostatic discharge max. to
MIL-STD-883C method 3015.7
with ref. to VSS
VSmax
1000V
Maximum soldering conditions
TSmax
290°C x 10s
Table 1
Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device reliability
or cause malfunction.
Handling Procedures
This device has built-in protection against high static
voltages or electric fields; however, anti-static precautions
must be taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur when
all terminal voltages are kept within the voltage range.
Unused inputs must always be tied to a defined logic
voltage level.
Operating Conditions
Parameter
Symbol Min
Typ
Max Unit
Operating
Temperature
TA
-40
+85
°C
Logic supply voltage
VDD
2
5
6
V
LCD supply voltage
VLCD
2
5
9
V
Table 2
Electrical Characteristics
VDD = 5V ±10%, VLCD = 2 to 7V and TA = -40 to +85°C, unless otherwise specified
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Dynamic supply current
ILCD
See note 1
150
250
µA
Dynamic supply current
IDD
See note 1 at TA = 25°C
0.1
1
µA
Dynamic supply current
IDD
See note 1
3
12
µA
Dynamic supply current
IDD
See note 2
200
250
µA
Standby supply current
ISS
See note 3 at TA = 25°C
0.1
1
µA
Control Signals DI, CLK, STR, FR
and COL
Input leakage
IIN
0 < VIN < VDD
1
1000
nA
Input capacitance
CIN
at TA = 25°C
8
pF
Low level input voltage
VIL
0
0.8
V
High level input voltage for DI, STR,
FR and COL
VIH
2.0
VDD
V
High level input voltage for CLK
VIH
3.0
VDD
V
Data Output DO
High level output voltage
VOH
IH = 4 mA
2.4
V
Low level output voltage
VOL
IL = 4 mA
0.4
V
Driver Outputs S1 … S40
Driver impedance (note 4)
ROUT
IOUT = 10µA, VLCD = 7V
1.0
1.5
k
Ω
Driver impedance (note 4)
ROUT
IOUT = 10µA, VLCD = 3V
2.6
3.5
k
Ω
Driver impedance (note 4)
ROUT
IOUT = 10µA, VLCD = 2V
7
k
Ω
Bias impedance V1, V2, V3 (note 5)
RBIAS
IOUT = 10µA, VLCD = 7V
18
24
k
Ω
Bias impedance V1, V2, V3 (note 5)
RBIAS
IOUT = 10µA, VLCD = 3V
20
27
k
Ω
Bias impedance V1, V2, V3 (note 5)
RBIAS
IOUT = 10µA, VLCD = 2V
24
k
Ω
DC output component
± VDC
see Tables 4a & 4b,
VLCD = 5V
30
50
mV
Table 3
Note 1
: All outputs open, STR at VSS, FR = 400 Hz, all other inputs at VDD.
Note 2
: All outputs open, STR at VSS, FR = 400 Hz, fCLK = 1 MHz, all other inputs at VDD.
Note 3
: All outputs open, all inputs at VDD.
Note 4
: This is the impedance between of the voltage bias level pins (V1, V2 or V3) and the output pins S1 to S40 when a
given voltage bias level is driving the outputs (S1 to S40)
Note 5
: This is the impedance seen at the segment pin. Outputs measured one at a time.



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