MMM5063 datasheet(4/20 Pages) FREESCALE

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ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005

MMM5063 Advance Information

MOTOROLA

Electrical Specifications

Second Harmonic Leakage at DCS Output (Crosstalk

isolation)

--28

-15

dBm

Input Return Loss

|S11|

-10

Output Power Isolation (Vramp = 0 V, VGSM1,2,3 = 0 V)

Poff

--45

-40

dBm

Noise Power in Rx Band @ Pin = -1.0 dBm (100 kHz

measurement bandwidth)

@ fo + 10 MHz (fo = 915 MHz)

@ fo + 20 MHz (fo = 915 MHz)

-80

-81

dBm

Noise Power in Rx Band @ Pin = 6.0 dBm (100 kHz

measurement bandwidth)

@ fo + 10 MHz (fo = 915 MHz)

@ fo + 20 MHz (fo = 915 MHz)

-84

-86

-77

-81

dBm

Stability-Spurious Output (Pout = 5.0 to 35 dBm, Load

VSWR = 6:1 all Phase Angles, Adjust Vramp for

specified power)

Pspur

-60

dBc

Load Mismatch Stress (Pout = 5.0 to 35 dBm, Load

VSWR = 10:1 all phase angles, 5 seconds, Adjust Vramp

for specified power)

No Degradation in Output Power

Before and After Test

DCS Section(Pin = 2.0 dBm, VDCS1,2,3 = 3.5 V pulsed, VdB = 3.5 V, VREG = 2.8 V, Vramp = 1.8 V pulsed, VBS = 0 V)

Frequency Range

1710

1785

MHz

Output Power

Pout

32.5

33.8

dBm

Power Added Efficiency

PAE

Output Power @ Low Voltage (VDCS1,2,3 = 2.8 V pulsed,

VdB= 2.8 V)

Pout

dBm

Power Added Efficiency @ Low Voltage (VDCS1,2,3 = 2.8

V pulsed, VdB= 2.8 V)

PAE

Harmonic Output

2fo

≥3fo

-65

-50

-45

dBc

Input Return Loss

|S11|

-9.0

Output Power Isolation (Vramp = 0 V, VDCS1,2,3 = 0 V)

Poff

--40

-35

dBm

Noise Power in Rx Band @ Pin = 2.0 dBm @ fo + 20

MHz (fo = 1785 MHz) (100 kHz measurement

bandwidth)

-78

-75

dBm

Stability-Spurious Output (Pout = 0 to 33 dBm, Load

VSWR = 6:1 all Phase Angles, Adjust Vramp for

specified power)

Pspur

-60

dBc

Table 4. Electrical Characteristics (Continued)

(Peak measurement at 25% duty cycle, 4.6 ms period, TA = 25°C, unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

Freescale Semiconductor, Inc.

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