MRF9080LR3 MRF9080LSR3

5−1

Freescale Semiconductor

Wireless RF Product Device Data

RF Power Field Effect Transistors

N−Channel Enhancement−Mode Lateral MOSFETs

Designed for GSM 900 MHz frequency band, the high gain and broadband

performance of these devices make them ideal for large−signal, common−

source amplifier applications in 26 volt base station equipment.

• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts

Output Power @ P1db: 75 Watts

Power Gain @ P1db: 18.5 dB

Efficiency @ P1db: 55%

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large−Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain−Source Voltage

−0.5, +65

Vdc

Gate−Source Voltage

−0.5, +15

Vdc

Derate above 25°C

250

1.43

W

W/°C

Storage Temperature Range

−65 to +150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.7

°C/W

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

1 (Minimum)

Machine Model

M1 (Minimum)

NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF9080

Rev. 5, 12/2004

Freescale Semiconductor

Technical Data

MRF9080LR3

MRF9080LSR3

GSM 900 MHz FREQUENCY BAND,

75 W, 26 V

LATERAL N−CHANNEL

RF POWER MOSFETs

CASE 465−06, STYLE 1

NI−780

MRF9080LR3

CASE 465A−06, STYLE 1

NI−780S

MRF9080LSR3

© Freescale Semiconductor, Inc., 2004. All rights reserved.