MRF9080LSR3 datasheet(2/12 Pages) FREESCALE

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Freescale Semiconductor

Wireless RF Product Device Data

MRF9080LR3 MRF9080LSR3

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0)

IDSS

—

µAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vds, VGS = 0)

IDSS

—

µAdc

Gate−Source Leakage Current

(VGS = 5 Vdc, VDS = 0 )

IGSS

—

µAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 300 µAdc)

VGS(th)

2.0

—

4.0

Vdc

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 700 mAdc)

VGS(Q)

—

3.7

—

Vdc

Drain−Source On−Voltage

(VGS = 10 Vdc, ID = 2 Adc)

VDS(on)

—

0.19

0.4

Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 6 Adc)

gfs

—

8.0

—

Dynamic Characteristics (1)

Output Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1 MHz)

Coss

—

Reverse Transfer Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1 MHz)

Crss

—

2.9

—

Functional Tests (In Freescale Test Fixture, 50 ohm system) (2)

Power Output, 1 dB Compression Point

(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)

P1dB

—

Common−Source Amplifier Power Gain @ 70 W (Min)

(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)

Gps

18.5

Drain Efficiency @ Pout = 70 W

(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)

η1

—

Drain Efficiency @ P1dB

(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)

η2

—

Input Return Loss

(VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 921 and 960 MHz)

IRL

9.5

12.5

—

Output Mismatch Stress

(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 600 mA,

f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)

No Degradation In Output Power

Before and After Test

1. Part is internally input matched.

2. To meet application requirements, Freescale test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency

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