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STD45NF75 Datasheet(PDF) 2 Page - STMicroelectronics |
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STD45NF75 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 12 page ![]() STD45NF75 2/12 THERMAL DATA ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ON (*) DYNAMIC Rthj-case Thermal Resistance Junction-case Max 1.5 °C/W Rthj-pcb Thermal Resistance Junction-pcb Max see curve on page 6 °C/W Tl Maximum Lead Temperature For Soldering Purpose (for 10 sec. 1.6 mm from case) 275 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 75 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 24 V RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 20 A 0.018 0.024 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS = 25 V ID =20 A 50 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1760 360 140 pF pF pF |
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