STP10NK80Z datasheet(3/17 Pages) STMICROELECTRONICS

3 / 17 page

STP10NK80Z, STP10NK80ZFP, STW10NK80Z

Electrical ratings

Doc ID 8911 Rev 7

3/17

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220/ TO-247

TO-220FP

VDSS

Drain-source voltage (VGS = 0)

800

VDGR

Drain-gate voltage (RGS = 20kΩ)800

VGS

Gate-source voltage

± 30V

Drain current (continuous) at TC = 25°C

9(1)

Limited by maximum junction temperature.

Drain current (continuous) at TC=100°C

6(1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

36(1)

PTOT

Total dissipation at TC = 25°C

160

Derating factor

1.28

0.32W/°C

Vesd(G-S)

G-S ESD (HBM C=100pF, R=1.5k

Ω)

4kV

dv/dt(3)

3.ISD ≤ 9 A, di/dt ≤ 200 A/µs,VDD ≤ V(BR)DSS, Tj ≤ TJMAX

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (DC)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220 TO-220FP

TO-247

Rthj-case

Thermal resistance junction-case Max

0.78

3.1

0.78

°C/W

Rthj-a

Thermal resistance junction-ambient Max

62.5

°C/W

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, Vdd=50V)

290

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