Electrical characteristics

STP10NK80Z, STP10NK80ZFP, STW10NK80Z

4/17

Doc ID 8911 Rev 7

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

800

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 800V

VDS = 800V, TC = 125°C

1

50

µA

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

±

10

µA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 100µA

33.75

4.5

V

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 4.5A

0.78

0.9

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS =15V, ID = 4.5A

-9.6

-

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

-

2180

205

38

-

pF

pF

pF

Coss eq

(2)

.

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

inceases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0V to 640V

-105

-

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=640V, ID = 9A

VGS =10V

See Figure 20

-

72

12.5

37

-

nC

nC

nC