©

1987

SILICON SWITCHING DIODE

1SS303

HIGH SPEED SWITCHING

SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE

DATA SHEET

Document No. D16308EJ2V0DS00 (2nd edition)

(Previous No. DC-2100)

Date Published July 2002 NS CP(K)

Printed in Japan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

FEATURES

• Low capacitance: Ct = 2.5 pF TYP.

• High speed switching: trr = 4.0 ns MAX.

• Wide applications including switching, limitter, clipper.

• Double diode configuration assures economical use.

ABSOLUTE MAXIMUM RATINGS

Maximum Voltages and Currents (TA = 25°C)

Peak Reverse Voltage

VRM

75

V

DC Reverse Voltage

VR

50

V

Surge Current (1

µs)

Note

IFSM

6.0

A

Surge Current (1

µs)

IFSM

4.0

A

Peak Forward Current

Note

IFM

450

mA

Peak Forward Current

IFM

300

mA

Average Rectified Current

Note

IO

150

mA

Average Rectified Current

IO

100

mA

Maximum Temperatures

Junction Temperature

Tj

150

°C

Storage Temperature Range

Tstg

–55 to + 150

°C

Thermal Resistance

Junction to Ambient

Note

Rth(j-a)

1.0

°C/mW

Junction to Ambient

Rth(j-a)

0.85

°C/mW

Note Both diodes loaded simultaneously.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

VF1

IF = 10 mA

0.72

1.0

V

VF2

IF = 50 mA

0.88

1.1

V

Forward Voltage

VF3

IF = 100 mA

1.0

1.2

V

Reverse Current

IR

VR = 50 V

0.1

µA

Capacitance

Ct

VR = 0 V, f = 1.0 MHz

2.5

4.0

pF

Reverse Recovery Time

trr

See Test Circuit.

4.0

ns

PACKAGE DIMENSIONS (Unit: mm)

2.1

±0.1

1.25

±0.1

3

Marking

2

1

CONNECTION DIAGRAM (Top View)

2

1

3

1. Cathode

2. Cathode

3. Anode

Marking : A4