©

1987

SILICON SWITCHING DIODE

1SS305

HIGH SPEED SWITCHING

SILICON EPITAXIAL DIODE

DATA SHEET

Document No. D16310EJ2V0DS00 (2nd edition)

(Previous No. DC-2102)

Date Published July 2002 NS CP(K)

Printed in Japan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

FEATURES

• Low capacitance: Ct = 4.0 pF MAX.

• High speed switching: trr = 3.0 ns MAX.

• Wide applications including switching, limitter, clipper.

ABSOLUTE MAXIMUM RATINGS

Maximum Voltages and Currents (TA = 25°C)

Peak Reverse Voltage

VRM

100

V

DC Reverse Voltage

VR

100

V

Peak Forward Current

IFM

300

mA

Average Rectified Current

IO

100

mA

DC Forward Current

IF

100

mA

Maximum Temperatures

Junction Temperature

Tj

150

°C

Storage Temperature Range

Tstg

–55 to + 150

°C

Thermal Resistance

Junction to Ambient

Rth(j-a)

0.85

°C/mW

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

VF1

IF = 10 mA

720

850

mV

VF2

IF = 50 mA

850

1000

mV

Forward Voltage

VF3

IF = 100 mA

950

1200

mV

Reverse Current

IR

VR = 100 V

1.0

µA

Capacitance

Ct

VR = 0 V, f = 1.0 MHz

2.0

4.0

pF

Reverse Recovery Time

trr

IF = 10 mA, VR = 6 V, RL = 100

Ω,

See Test Circuit.

3.0

ns

PACKAGE DIMENSIONS (Unit: mm)

2.1

±0.1

1.25

±0.1

3

Marking

2

1

CONNECTION DIAGRAM (Top View)

2

1

3

1. N.C.

2. Anode

3. Cathode

Marking : A14