EFP01 datasheet(41/158 Pages) SILABS

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Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Digital input low voltage

VIL

—

VIO*0.3

Digital input high voltage

VIH

VIO*0.7

—

Nominal input capacitor2

CIN

VDDA / VDDB / VBOOST inputs,

25% tolerance

4.7

—

µF

Nominal output capacitor2

COUT

VOA / VOB / VOC outputs, 25%

tolerance

2.2

—

µF

VDDB internal measurement

accuracy

VDDBMEAS_ACC

—

-0.112

—

LSB

VDDA internal measurement

accuracy

VDDAMEAS_ACC

—

-0.02

—

LSB

Temperature measurement

accuracy

TEMPMEAS_ACC

—

+/- 10

—

°C

ADC measurement conver-

sion time for one voltage and

one temperature sample

TMEAS

—

18.6

—

µs

Power-on reset threshold,

rising

VPOR_THR_RIS

—

1.702

Power-on reset threshold,

falling

VPOR_THR_FAL

1.58

—

1.68

Under-voltage lockout

threshold

VUVLO_THR

—

1.2

—

VDDB current when VDDB <

UVLO threshold

IUVLO

VDDB = 1.0V

—

On resistance of DCDC A

buck powertrain NMOS FET3

RDSA_BUCK_NM

VDDB = 3.3V

—

0.271

1.07

Ω

On resistance of DCDC A

buck powertrain PMOS FET3

RDSA_BUCK_PM

VDDB = 3.3V

—

0.150

0.676

Ω

On resistance of DCDC A

boost powertrain NMOS

FET3

RDSA_BOOST_N

MOS

VDDB = VOA = 3.3V

—

0.140

0.450

Ω

On resistance of DCDC A

boost powertrain PMOS

FET3

RDSA_BOOST_P

MOS

VDDB = VOA = 3.3V

—

0.172

0.645

Ω

On resistance of DCDC B

buck powertrain NMOS FET3

RDSB_BUCK_NM

VDDB = 3.3V

—

0.203

0.783

Ω

On resistance of DCDC B

buck powertrain PMOS FET3

RDSB_BUCK_PM

VDDB = 3.3V

—

0.294

1.26

Ω

On resistance of LDO B in

bypass mode3

RDSB_LDO_BYP

VDDB = 3.0V

—

0.778

1.32

Ω

VDDB = 1.8V

—

1.19

1.96

Ω

On resistance of LDO C in

bypass mode3

RDSC_LDO_BYP

VDDB = 3.0V

—

0.76

1.32

Ω

VDDB = 1.8V

—

1.19

1.96

Ω

On resistance of VOA

switch3

RDSVSW

VDDB = 3.0V

—

1.38

2.91

Ω

VDDB = 1.8V

—

2.2

4.14

Ω

EFP01 Energy Friendly PMIC Family Data Sheet

Electrical Specifications

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