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LM4050 Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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LM4050 Datasheet(HTML) 4 Page - National Semiconductor (TI) |
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4 / 15 page  Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Reverse Current 20 mA Forward Current 10 mA Power Dissipation (T A = 25˚C) (Note 2) M3 Package 280 mW Storage Temperature −65˚C to +150˚C Lead Temperature M3 Package Vapor phase (60 seconds) +215˚C Infrared (15 seconds) +220˚C ESD Susceptibility Human Body Model (Note 3) 2 kV Machine Model (Note 3) 200V See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices. Operating Ratings (Note 2) Temperature Range (T min ≤ T A ≤ T max) Industrial Temperature Range −40˚C ≤ T A ≤ +85˚C Extended temperature Range −40˚C ≤ T A ≤ +125˚C Reverse Current LM4050-2.0 60 µA to 15 mA LM4050-2.5 60 µA to 15 mA LM4050-4.1 68 µA to 15 mA LM4050-5.0 74 µA to 15 mA LM4050-8.2 91 µA to 15 mA LM4050-10.0 100 µA to 15 mA LM4050-2.0 Electrical Characteristics Boldface limits apply for T A =TJ =TMIN to TMAX; all other limits TA =TJ = 25˚C. The grades A, B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1%, ±0.2%, and 0.5% respectively. Symbol Parameter Conditions Typical (Note 4) LM4050AIM3 LM4050AEM3 Limits (Note 5) LM4050BIM3 LM4050BEM3 Limits (Note 5) LM4050CIM3 LM4050CEM3 Limits (Note 5) Units (Limit) VR Reverse Breakdown Voltage IR = 100 µA 2.048 V Reverse Breakdown Voltage Tolerance (Note 6) IR = 100 µA ±2.048 ±4.096 ±10.24 mV (max) Industrial Temp. Range ±9.0112 ±11.4688 ±14.7456 mV (max) Extended Temp. Range ±12.288 ±14.7456 ±17.2032 mV (max) IRMIN Minimum Operating Current 41 µA 60 60 60 µA (max) 65 65 65 µA (max) ∆VR/∆T Average Reverse Breakdown Voltage Temperature Coefficient (Note 6) IR =10 mA ±20 ppm/˚C IR =1 mA ±15 ppm/˚C IR = 100 µA ±15 ±50 ±50 ±50 ppm/˚C (max) ∆VR/∆IR Reverse Breakdown Voltage Change with Operating Current Change (Note 7) IRMIN ≤ IR ≤ 1 mA 0.3 mV 0.8 0.8 0.8 mV (max) 1.2 1.2 1.2 mV (max) 1mA ≤ IR ≤ 15 mA 2.3 mV 6.0 6.0 6.0 mV (max) 8.0 8.0 8.0 mV (max) ZR Reverse Dynamic Impedance IR = 1 mA, f = 120 Hz, IAC = 0.1 IR 0.3 Ω eN Wideband Noise IR = 100 µA 34 µVrms 10 Hz ≤ f ≤ 10 kHz ∆VR Reverse Breakdown Voltage Long Term Stability t = 1000 hrs T = 25˚C ±0.1˚C IR = 100 µA 120 ppm VHYST Thermal Hysteresis (Note 8) ∆T = −40˚C to 125˚C 0.7 mV www.national.com 4 |
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