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LM4050 Datasheet(PDF) 8 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LM4050
Description  Precision Micropower Shunt Voltage Reference
PDF  15 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM4050 Datasheet(HTML) 8 Page - National Semiconductor (TI)

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LM4050-10.0
Electrical Characteristics
Boldface limits apply for T
A =TJ =TMIN to TMAX; all other limits TA =TJ = 25˚C. The grades A, B and C designate initial
Reverse Breakdown Voltage tolerances of ±0.1% and ±0.2% and 0.5% respectively.
Symbol
Parameter
Conditions
Typical
(Note 4)
LM4050AIM3
LM4050AEM3
Limits
(Note 5)
LM4050BIM3
LM4050BEM3
Limits
(Note 5)
LM4050CIM3
LM4050CEM3
Limits
(Note 5)
Units
(Limit)
VR
Reverse Breakdown Voltage
IR = 150 µA
10.00
V
Reverse Breakdown Voltage
Tolerance (Note 6)
IR = 150 µA
±10
±20
±50
mV (max)
Industrial Temp. Range
±43
±53
±83
mV (max)
Extended Temp. Range
±60
±70
±100
mV (max)
IRMIN
Minimum Operating Current
80
µA
100
100
100
µA (max)
Industrial Temp. Range
103
103
103
µA (max)
Extended Temp. Range
110
110
110
µA (max)
∆VR/∆T
Average Reverse Breakdown
Voltage Temperature Coefficient
(Note 6)
IR =10 mA
±40
ppm/˚C
IR =1 mA
±20
ppm/˚C
IR = 150 µA
±20
±50
±50
±50
ppm/˚C (max)
∆VR/∆IR
Reverse Breakdown Voltage
Change with Operating Current
Change (Note 7)
IRMIN ≤ IR ≤ 1 mA
0.8
mV
1.5
1.5
1.5
mV (max)
3.5
3.5
3.5
mV (max)
1mA
≤ IR ≤ 15 mA
8.0
mV
12.0
12.0
12.0
mV (max)
23.0
23.0
23.0
mV (max)
ZR
Reverse Dynamic Impedance
IR = 1 mA, f = 120 Hz,
0.7
Ω
IAC = 0.1 IR
eN
Wideband Noise
IR = 150 µA
150
µVrms
10 Hz
≤ f ≤ 10 kHz
∆VR
Reverse Breakdown Voltage
Long Term Stability
t = 1000 hrs
T = 25˚C ±0.1˚C
120
ppm
IR = 150 µA
VHYST
Thermal Hysteresis
(Note 8)
∆T = −40˚C to 125˚C
2.8
mV
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax =(TJmax −TA)/θJA or the
number given in the Absolute Maximum Ratings, whichever is lower. For the LM4050, TJmax = 125˚C, and the typical thermal resistance (θJA), when board mounted,
is 326˚C/W for the SOT-23 package.
Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 k
Ω resistor into each pin. The machine model is a 200 pF capacitor discharged
directly into each pin.
Note 4: Typicals are at TJ = 25˚C and represent most likely parametric norm.
Note 5: Limits are 100% production tested at 25˚C. Limits over temperature are guaranteed through correlation using Statistical Quality Control (SQC) methods.
The limits are used to calculate National’s AOQL.
Note 6: The boldface (over-temperature) limit for Reverse Breakdown Voltage Tolerance is defined as the room temperature Reverse Breakdown Voltage Tolerance
±[(
∆V R/∆T)(max∆T)(VR)]. Where, ∆VR/∆T is the VR temperature coefficient, max∆T is the maximum difference in temperature from the reference point of 25˚C to
T MIN or TMAX, and VR is the reverse breakdown voltage. The total over-temperature tolerance for the different grades in the industrial temperature range where
max
∆T = 65˚C is shown below:
A-grade: ±0.425% = ±0.1% ±50 ppm/˚C x 65˚C
B-grade: ±0.525% = ±0.2% ±50 ppm/˚C x 65˚C
C-grade: ±0.825% = ±0.5% ±50 ppm/˚C x 65˚C
Therefore, as an example, the A-grade LM4050-2.5 has an over-temperature Reverse Breakdown Voltage tolerance of ±2.5V x 0.425% = ±11 mV.
Note 7: Load regulation is measured on pulse basis from no load to the specified load current. Output changes due to die temperature change must be taken into
account separately.
Note 8: Thermal hysteresis is defined as the difference in voltage measured at +25˚C after cycling to temperature -40˚C and the 25˚C measurement after cycling
to temperature +125˚C.
www.national.com
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