2N930 datasheet(1/2 Pages) MICROSEMI

Part #	2N930

Description	NPN LOW POWER SILICON TRANSISTOR

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TECHNICAL DATA

NPN LOW POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/253

Devices

Qualified Level

2N930

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

Symbol

Value

Units

Collector-Emitter Voltage

VCEO

45

Vdc

Collector-Base Voltage

VCBO

60

Vdc

Emitter-Base Voltage

VEBO

6.0

Vdc

Collector Current

IC

30

mAdc

Total Power Dissipation

@ TA = +25

0C(1)

@ TC = +25

0C(2)

PT

300

600

mW

Operating & Storage Junction Temperature Range

TJ, Tstg

-55 to +200

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

RθJC

97

0C/W

1) Derate linearly 2.0 mW/

0C above TA = +250C

2) Derate linearly 4.0 mW/

0C above TC = +250C

TO- 18*

(TO-206AA)

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (TC = +25

0C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

IC = 10 mAdc

V(BR)CEO

45

Vdc

Collector-Base Cutoff Current

VCB = 60 Vdc

VCB = 45 Vdc

ICBO

10

µAdc

ηAdc

Emitter-Base Cutoff Current

VEB = 6.0 Vdc

VEB = 5.0 Vdc

IEBO

10

5.0

µAdc

ηAdc

Collector-Emitter Cutoff Current

VCE = 45 Vdc

ICES

2.0

ηAdc

Collector-Base Cutoff Current

VCE = 5.0 Vdc

ICEO

2.0

ηAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

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