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D77178 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # D77178
Description  N--Channel Enhancement--Mode Lateral MOSFET
PDF  16 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

D77178 Datasheet(HTML) 2 Page - NXP Semiconductors

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RF Device Data
Freescale Semiconductor, Inc.
AFT23H201--24SR6
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
Operating Junction Temperature Range (1,2)
TJ
–40 to +225
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 75C, 45 W Avg., W--CDMA, 28 Vdc, IDQA = 500 mA, VGSB =0.8 Vdc,
2350 MHz
RJC
0.27
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
III
Table 4. Electrical Characteristics (TA =25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS =32 Vdc, VGS =0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
—
1
Adc
On Characteristics -- Side A, Carrier
Gate Threshold Voltage
(VDS =10 Vdc, ID = 140 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Gate Quiescent Voltage
(VDD =28 Vdc, ID = 500 mAdc, Measured in Functional Test)
VGSA(Q)
1.4
1.8
2.2
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =1.4 Adc)
VDS(on)
0.1
0.14
0.4
Vdc
On Characteristics -- Side B, Peaking
Gate Threshold Voltage
(VDS =10 Vdc, ID = 200 Adc)
VGS(th)
0.8
1.2
1.6
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =2 Adc)
VDS(on)
0.1
0.14
0.4
Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Each side of device measured separately.
(continued)



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