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1998

©

Document No. D15606EJ3V0DS00 (3rd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SD2164

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

DATA SHEET

2002

The 2SD2164 is a single power transistor developed especially

for high hFE. This transistor is ideal for simplifying drive circuits and

reducing power dissipation because its hFE is as high as that of

Darlington transistors, but it is a single transistor.

In addition, this transistor features a small resin insulated

package, thus contributing to high-density mounting and mounting

cost reduction.

FEATURES

• High hFE and low VCE(sat):

hFE

≅ 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A)

VCE(SAT)

≅ 0.3 V TYP. (IC = 2.0 A, IB = 20 mA)

• Full mold package that does not require an insulating board or

insulation bushing

ABSOLUTE MAXIMUM RATINGS (TA = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

60

V

Collector to emitter voltage

VCEO

60

V

Emitter to base voltage

VEBO

7.0

V

Collector current (DC)

IC(DC)

3.0

A

Collector current (pulse)

IC(pulse)

5.0

Note

A

Base current (DC)

IB(DC)

0.5

A

Total power dissipation

PT (TC = 25

°C)

20

W

Total power dissipation

PT (TA = 25

°C)

2.0

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Note PW

≤ 300

µs, duty cycle ≤ 10%

PACKAGE DRAWING (UNIT: mm)

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