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2SD2230 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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2SD2230 Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 8 page ![]() 1998 © 'RFXPHQW 1R '(-9'6 VW HGLWLRQ 'DWH 3XEOLVKHG $SULO 1 &3. 3ULQWHG LQ -DSDQ 6,/,&21 75$16,6725 6' 1316,/,&21(3,7$;,$/75$16,6725 )25/2:)5(48(1&< 32:(5$03/,),(56 '$7$ 6+((7 2002 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. The 2SD2230 is an element realizing ultra low VCE(sat). This transistor is ideal for muting such as stereo recorders, VCRs, and TVs. FEATURES • Low VCE(sat): VCE(sat)1 = 33 mV TYP. @IC = 100 mA, IB = 10 mA VCE(sat)2 = 150 mV TYP. @IC = 500 mA, IB = 20 mA • High hFE and high current QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25 °°°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 16 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 5 V Collector current (DC) ID(DC) 500 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Electrode connection 1. Emitter (E) 2. Base (B) 3. Collector (C) Marking: D46 |
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