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SILICON TRANSISTOR

2SD2383

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-VOLTAGE SWITCHING

DATA SHEET

Document No. D16154EJ2V0DS00 (2nd edition)

Date Published August 2004 NS CP(K)

Printed in Japan

2002

The mark

shows major revised points.

DESCRIPTION

The 2SD2383 is an element realizing high voltage in small

dimension. This transistor is ideal for downsizing sets

requiring high voltage.

FEATURES

• High voltage

• Small dimension

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SD2383

SC-59

Marking: N1

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage

VCBO

400

V

Collector to Emitter Voltage

VCEO

300

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current (DC)

IC(DC)

20

mA

Total Power Dissipation

PT

200

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

PACKAGE DRAWING (Unit: mm)

2.8 ±0.2

1.5

0.65

+0.1

–0.15

Marking

1

2

3

1. Emitter

2. Base

3. Collector