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2SD2383 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # 2SD2383
Description  SILICON TRANSISTOR
PDF  6 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SD2383 Datasheet(HTML) 4 Page - Renesas Technology Corp

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Data Sheet D16154EJ2V0DS
2
2SD2383
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 200 V, IE = 0 A
100
nA
Emitter Cut-off Current
IEBO
VEB = 5.0 V, IC = 0 A
100
nA
DC Current Gain
hFE
VCE = 6.0 V, IC = 5 mA
100
250
−
Collector Saturation Voltage
VCE(sat)
IC = 5.0 mA, IB = 0.5 mA
85
500
mV
Base Saturation Voltage
VBE(sat)
IC = 5.0 mA, IB = 0.5 mA
0.68
1.0
V
Gain Bandwidth Product
fT
VCE = 30 V, IE =
−10 mA
90
MHz
Output Capacitance
Cob
VCB = 30 V, IE = 0, f = 1 MHz
1.3
pF
TYPICAL CHARACTERISTICS (TA = 25°C)
250
200
150
100
50
0
0
50
100
150
25
75
125
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TA - Ambient Temperature - ˚C
Free air
100
50
20
10
5
2
1
0.1
0.5
0.2
600
800
1000
700
900
500
400
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VBE - Base to Emitter Voltage - mV
VCE = 6.0 V
100
100
50
50
20
20
10
1000
500
200
10
5
2
1
0.1
0.5
0.2
DC CURRENT GAIN vs.
COLLECTOR CURRENT
IC - Collector Current - mA
VCE = 6.0 V
TA = 75˚C
25˚C
−25˚C
100
100
50
50
20
20
10
1000
500
200
10
5
2
1
0.1
0.5
0.2
COLLECTOR SATURATION VOLTAGE vs.
COLLECTOR CURRENT
IC - Collector Current - mA
IC = 10.IB
TA = 75˚C
25˚C
−25˚C



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