T4-LDS-xxxx, Rev x (10-02-14)

©2013 Microsemi Corporation

Page 2 of 6

1N8149

– 1N8182

MECHANICAL and PACKAGING

 CASE: Hermetically sealed voidless hard glass with tungsten slugs.

 TERMINALS: Axial-leads are tin/lead or RoHS compliant matte/tin plating over copper.

 MARKING: Body paint and part number

 POLARITY: Cathode band

 MOUNTING: Any position

 TAPE & REEL option: Standard per EIA-296.

 WEIGHT: Approximately 340 milligrams.

 See Package Dimensions on last page.

PART NOMENCLATURE

MQ

1N8149

(e3)

Reliability Level

Blank = Commercial

MQ (reference JAN)

MX (reference JANTX)

MV (reference JANTXV)

MS (reference JANS)

Type number

(see Electrical Characteristics

table)

RoHS Compliance

e3 = RoHS compliant

Blank = non-RoHS compliant

SYMBOLS & DEFINITIONS

Symbol

Definition



V(BR)

Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in

temperature that caused it expressed in %/°C or mV/°C.

V(BR)

Breakdown Voltage: The voltage across the device at a specified current I(BR) in the breakdown region.

VWM

Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that

may be continuously applied over the standard operating temperature.

ID

Standby Current: The current through the device at rated stand-off voltage.

I(BR)

Breakdown Current: The current used for measuring Breakdown Voltage V(BR)

IPP

Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse

current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an

external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.

VC

Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an

impulse current (IPP) for a specified waveform.

PPP

Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The

impulse power is the maximum-rated value of the product of IPP and VC.

CT

Total Capacitance: The total small signal capacitance between the diode terminals of a complete device.

VWIB

Inverse Blocking Voltage: The maximum-rated value of dc or peak blocking voltage in the inverse direction.

IIB

Blocking Leakage Current: The current through the device at the rated inverse blocking voltage (VWIB).