BC856SH

65 V, 100 mA PNP/PNP general-purpose double transistor

22 March 2021

Product data sheet

1. General description

PNP/PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted

Device (SMD) plastic package.

NPN/NPN complement: BC846SH

2. Features and benefits

• Low collector capacitance

• Low collector-emitter saturation voltage

• Closely matched current gain

• Reduces number of components and board space

• No mutual interference between the transistors

• High-temperature applications up to 175 °C

3. Applications

• General-purpose switching and amplification

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

VCEO

collector-emitter

voltage

open base

-

-

-65

V

IC

collector current

-

-

-100

mA

hFE

DC current gain

VCE = -5 V; IC = -2 mA; Tamb = 25 °C

110

-

-