Nexperia

BC856SH

65 V, 100 mA PNP/PNP general-purpose double transistor

5. Pinning information

Table 2. Pinning information

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

E1

emitter TR1

2

B1

base TR1

3

C2

collector TR2

4

E2

emitter TR2

5

B2

base TR2

6

C1

collector TR1

1

3

2

4

5

6

TSSOP6 (SOT363)

sym138

B1

E1

C2

B2

C1

TR1

TR2

E2

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

BC856SH

TSSOP6

plastic, surface-mounted package; 6 leads; 0.65 mm pitch;

2.1 mm x 1.25 mm x 0.95 mm body

SOT363

7. Marking

Table 4. Marking codes

Type number

Marking code[1]

BC856SH

7F%

[1] % = placeholder for manufacturing site code

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

VCBO

collector-base voltage

open emitter

-

-80

V

VCEO

collector-emitter voltage open base

-

-65

V

VEBO

emitter-base voltage

open collector

-

-7

V

IC

collector current

-

-100

mA

ICM

peak collector current

-

-200

mA

IBM

peak base current

single pulse; tp ≤ 1 ms

-

-200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

270

mW

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

400

mW

Tj

junction temperature

-

175

°C

Tamb

ambient temperature

-55

175

°C

Tstg

storage temperature

-65

175

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 µm copper, tin-plated and standard footprint.

BC856SH

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© Nexperia B.V. 2021. All rights reserved

Product data sheet

22 March 2021

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