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US1AF Datasheet(PDF) 1 Page - DAESAN ELECTRONIC CORP. |
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US1AF Datasheet(HTML) 1 Page - DAESAN ELECTRONIC CORP. |
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1 / 2 page ![]() US1AF THRU US1MF Features · Ideal for printed circuit board · Low forward voltage drop · Low reverse leakage · Ultrafast reverse recovery time · High forward surge capability · High temperature soldering : 260℃/10seconds at terminals · Component in accordance to RoHS 2011/65/EU Maximum Ratings and Electrical Characteristics (TA=25°C unless otherwise noted) ULTRAFAST RECOVERY RECTIFIER CURRENT 1.0 A VOLTAGE 50 to 1000 V Mechanical Data · Case : SMAF Molding compound meets UL 94 V-0 flammability rating · Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 · Polarity : Laser band denotes cathode end Dimensions in inches and (millimeters) Maximum recurrent peak reverse voltage Maximum RMS voltage Typical thermal resistance from juction to ambient Maximum average forward rectified current at TL=100℃ V V Symbols Units A Maximum DC reverse current at rated DC blocking voltage V TA=25℃ TA=125℃ Items VRRM 1.0 TJ , TSTG 50 Maximum DC blocking voltage IFSM 30 500 V pF Maximum reverse recovery time (1) IR TRR 5 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load VRMS IF(AV) VF Typical junction capacitance (2) Typical thermal resistance from juction to lead 20 Operating junction and storage temperature range ℃/W ℃/W US1AF Maximum instantaneous forward voltage at 1.0A 1.0 1.3 1.7 -55 to +150 ℃ RθJL 50 75 Notes: (1) Reverse recovery test conditions : IF=0.5A, IR=1.0A, Irr=0.25A. (2) Measured at 1MHz and applied reverse voltage of 4.0Volts. US1DF US1GF US1JF US1KF US1MF 200 400 600 800 1000 35 140 280 420 560 700 50 100 US1BF 70 100 200 400 600 800 1000 VDC RθJA CJ 30 70 A μA ns https://dec.co.kr DAESAN ELECTRONIC CORP. SMAF 0.002(0.05) 0.011(0.30) 0.035(0.90) 0.051(1.30) 0.130(3.30) 0.146(3.70) 0.090(2.30) 0.110(2.80) 0.047(1.20) 0.063(1.60) 0.019(0.50) Min. 0.169(4.30) 0.193(4.90) |
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