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ECH8613 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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ECH8613 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() ECH8613 No.7780-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns Rise Time tr See specified Test Circuit. 340 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 100 ns Fall Time tf See specified Test Circuit. 130 ns Total Gate Charge Qg VDS=--6V, VGS=--5V, ID=--5A 9.5 nC Gate-to-Source Charge Qgs VDS=--6V, VGS=--5V, ID=--5A 2.1 nC Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--5V, ID=--5A 1.4 nC Diode Forward Voltage VSD IS=--5A, VGS=0 0.83 --1.5 V Package Dimensions unit : mm 2206B Electrical Connection Switching Time Test Circuit 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 1 4 85 0.15 0.65 2.9 0.3 PW=10 µs D.C. ≤1% P.G 50 Ω G S D ID= --3A RL=2Ω VDD= --6V VOUT ECH8613 VIN 0V --5V VIN 87 6 5 12 3 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view |
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