M59DR032EA datasheet(22/43 Pages) STMICROELECTRONICS

22 / 43 page

M59DR032EA, M59DR032EB

22/43

Table 16. DC Characteristics

Note: 1. Sampled only, not 100% tested.

2. VPP may be connected to 12V power supply for a total of less than 100 hrs.

3. For standard program/erase operation VPP is don’t care.

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

ILI

Input Leakage Current

≤ VIN ≤ VDD

±1

µA

ILO

Output Leakage Current

≤ VOUT ≤ VDD

±5

µA

ICC1

Supply Current

(Read Mode)

E = VIL, G = VIH, f = 6MHz

ICC2

Supply Current

(Power-Down)

RP = VSS ± 0.2V

210

µA

ICC3

Supply Current (Standby)

E = VDD ± 0.2V

µA

ICC4

(1)

Supply Current

(Program or Erase)

Word Program, Block Erase

in progress

ICC5

(1)

Supply Current

(Dual Bank)

Program/Erase in progress

in one Bank, Read in the

other Bank

IPP1

VPP Supply Current

(Program or Erase)

VPP = 12V ± 0.6V

IPP2

VPP Supply Current

(Standby or Read)

VPP ≤ VDD

0.2

µA

VPP = 12V ± 0.6V

100

400

µA

VIL

Input Low Voltage

–0.5

0.4

VIH

Input High Voltage

VDDQ –0.4

VDDQ + 0.4

VOL

Output Low Voltage

IOL = 100µA

0.1

VOH

Output High Voltage

CMOS

IOH = –100µA

VDDQ –0.1

VPP

(2,3)

VPP Supply Voltage

(Program or Erase)

–0.4

VDD + 0.4

Double Word Program

11.4

12.6

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